欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: SI6923DQ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode
中文描述: 3500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: TSSOP-8
文件頁數: 1/5頁
文件大小: 92K
代理商: SI6923DQ
April 2001
Si6923DQ
P-Channel 2.5V Specified PowerTrench
MOSFET with Schottky Diode
2001 Fairchild Semiconductor Corporation
Si6923DQ Rev. A(W)
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Applications
DC/DC conversion
Features
–3.5 A, –20 V. R
DS(ON)
= 0.045
@ V
GS
= –4.5 V
R
DS(ON)
= 0.075
@ V
GS
= –2.5 V
V
F
< 0.55 V @ 1 A
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
C
A
A
A
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
MOSFET Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
MOSFET Power Dissipation (minimum pad)
(Note 1)
Schottky Power Dissipation (minimum pad)
(Note 1)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
3.5
30
1.2
1.0
-55 to +150
Units
V
V
A
(Note 1)
P
D
W
°
C
Schottky Maximum Ratings
V
RRM
Repetitive Peak Reverse Voltage
I
F
Average Forward Current
I
FM
Peak Forward Current
20
1.5
30
V
A
A
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
MOSFET: 115
Schottky: 130
°
C/W
Package Marking and Ordering Information
Device Marking
Device
6923
Si6923DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
S
相關PDF資料
PDF描述
SI6928DQ Dual 30V N-Channel PowerTrench MOSFET
SI692DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET
SI6933DQ Dual 30V P-Channel PowerTrench MOSFET
SI6943 Dual P-Channel 2.5V Specified PowerTrench MOSFET
SI6943DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET
相關代理商/技術參數
參數描述
SI6923DQ-T1 功能描述:MOSFET 20V 3.5A 1.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6923DQ-T1-E3 功能描述:MOSFET 20V 3.5A 1.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6924AEDQ 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
SI6924AEDQ_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
SI6924AEDQ-T1 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
主站蜘蛛池模板: 威海市| 墨脱县| 昌邑市| 成安县| 合川市| 江孜县| 龙州县| 广宁县| 铁力市| 靖边县| 舞钢市| 东宁县| 洪雅县| 三明市| 石柱| 娄底市| 东海县| 衡阳市| 石河子市| 广宁县| 县级市| 台湾省| 朝阳县| 汕尾市| 新兴县| 建水县| 周至县| 阿克苏市| 吐鲁番市| 彰化县| 班戈县| 临武县| 崇左市| 上虞市| 舞钢市| 罗城| 永兴县| 海淀区| 威信县| 涡阳县| 南和县|