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參數資料
| 型號： | SI692DQ |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 雙N溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數： | 1/5頁 |
| 文件大小： | 80K |
| 代理商： | SI692DQ |
April 2001
SI6926DQ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
SI6926DQ Rev A(W)
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
Load switch
Motor drive
DC/DC conversion
Power management
Features
5.5 A, 20 V.
R
DS(ON)
= 0.021
@ V
GS
= 4.5 V
R
DS(ON)
= 0.035
@ V
GS
= 2.5 V
Extended V
GSS
range (
±
12V) for battery applications
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D1
S1
S1
G1
D2
S2
S2
G2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
P
D
Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
20
±
12
5.5
30
1.0
0.6
-55 to +150
Units
V
V
A
W
°
C
(Note 1a)
(Note 1a)
(Note 1b)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
6926
SI6926DQ
(Note 1a)
(Note 1b)
125
208
°
C/W
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI693 | 制造商:SEFRAM 功能描述:SOFT&USB & IR TRANS/RECEIVER |
| SI6933DQ | 功能描述:MOSFET 30V/25V PCh MOSFET Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6933DQ-T1 | 功能描述:MOSFET 30V 3.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6933DQ-T1-E3 | 功能描述:MOSFET 30V 3.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6933DQ-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:P-CHAN 30V TRENCH 32M CELL MOSFET D |
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