- 您現在的位置：買賣IC網 > PDF目錄382509 > SI6923 (Fairchild Semiconductor Corporation) P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode PDF資料下載
參數資料
| 型號： | SI6923 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode |
| 中文描述： | P通道2.5V的指定的PowerTrench MOSFET的肖特基二極管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 92K |
| 代理商： | SI6923 |
April 2001
Si6923DQ
P-Channel 2.5V Specified PowerTrench
MOSFET with Schottky Diode
2001 Fairchild Semiconductor Corporation
Si6923DQ Rev. A(W)
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It is combined with a low
forward drop Schottky diode which is isolated from the
MOSFET, providing a compact power solution for
asynchronous DC/DC converter applications.
Applications
DC/DC conversion
Features
–3.5 A, –20 V. R
DS(ON)
= 0.045
@ V
GS
= –4.5 V
R
DS(ON)
= 0.075
@ V
GS
= –2.5 V
V
F
< 0.55 V @ 1 A
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
S
S
G
C
A
A
A
TSSOP-8
Pin 1
4
3
2
1
5
6
7
8
MOSFET Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
MOSFET Power Dissipation (minimum pad)
(Note 1)
Schottky Power Dissipation (minimum pad)
(Note 1)
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
–
20
±
12
–
3.5
–
30
1.2
1.0
-55 to +150
Units
V
V
A
(Note 1)
P
D
W
°
C
Schottky Maximum Ratings
V
RRM
Repetitive Peak Reverse Voltage
I
F
Average Forward Current
I
FM
Peak Forward Current
20
1.5
30
V
A
A
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(minimum pad)
(Note 1)
MOSFET: 115
Schottky: 130
°
C/W
Package Marking and Ordering Information
Device Marking
Device
6923
Si6923DQ
Reel Size
13’’
Tape width
16mm
Quantity
3000 units
S
相關PDF資料 |
PDF描述 |
|---|---|
| SI6923DQ | P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode |
| SI6928DQ | Dual 30V N-Channel PowerTrench MOSFET |
| SI692DQ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| SI6933DQ | Dual 30V P-Channel PowerTrench MOSFET |
| SI6943 | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI6923DQ | 功能描述:MOSFET TSSOP8 FETKEY RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6923DQ-T1 | 功能描述:MOSFET 20V 3.5A 1.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6923DQ-T1-E3 | 功能描述:MOSFET 20V 3.5A 1.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6924AEDQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch, ESD Protection |
| SI6924AEDQ_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch, ESD Protection |
發布緊急采購，3分鐘左右您將得到回復。