- 您現在的位置：買賣IC網 > PDF目錄382509 > SI4467DY (FAIRCHILD SEMICONDUCTOR CORP) P-Channel 1.8V Specified PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | SI4467DY |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 13.5 A, 20 V, 0.0085 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 90K |
| 代理商： | SI4467DY |
January 2001
2001 Fairchild Semiconductor International
Si4467DY Rev A
Si4467DY
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
Power management
Load switch
Battery protection
Features
–13.5 A, –20 V.
R
DS(ON)
= 8.5 m
@ V
GS
= –4.5 V
R
DS(ON)
= 10.5 m
@ V
GS
= –2.5 V
R
DS(ON)
= 14 m
@ V
GS
= –1.8 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High current and power handling capability
D
D
S
SO-8
D
D
G
D
DD
SSS
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–
20
±
8
–
13.5
–
50
2.5
1.5
1.2
-55 to +175
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
50
125
25
°
C/W
°
C/W
°
C/W
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
4467
Si4467DY
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
S
相關PDF資料 |
PDF描述 |
|---|---|
| SI4480DY | 80V N-Channel PowerTrench MOSFET |
| SI4542 | 30V Complementary PowerTrench MOSFET |
| SI4542D | 30V Complementary PowerTrench MOSFET |
| SI4542DY | 30V Complementary PowerTrench MOSFET |
| SI4822 | Single N-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4467DY | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| SI4467DY_SBAA005A | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| SI4467DY-E3 | 功能描述:MOSFET 12V 12A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4467DY-T1 | 功能描述:MOSFET 12V 12A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4467DY-T1-E3 | 功能描述:MOSFET 12V 12A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。