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參數資料
| 型號： | SI4931DY-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 12-V (D-S) MOSFET |
| 中文描述： | 雙P溝道12 V的（副）MOSFET的 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 70K |
| 代理商： | SI4931DY-E3 |
FEATURES
TrenchFET Power MOSFET
Advanced High Cell Density Process
APPLICATIONS
Load Switching
Si4931DY
Vishay Siliconix
New Product
Document Number: 72379
S-32411—Rev. B, 24-Nov-03
www.vishay.com
1
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.018 @ V
GS
=
4.5 V
8.9
12
0.022 @ V
GS
=
2.5 V
8.1
0.028 @ V
GS
=
1.8 V
3.6
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Ordering Information:
Si4931DY—E3
Si4931DY-T1—E3 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
8.9
6.7
T
A
= 70 C
7.1
5.4
A
Pulsed Drain Current
I
DM
30
continuous Source Current (Diode Conduction)
a
I
S
1.7
0.9
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.1
W
T
A
= 70 C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
46
62.5
Steady State
80
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
24
32
Notes
a.
Surface Mounted on 1 ” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| SI4931DY-T1 | Dual P-Channel 12-V (D-S) MOSFET |
| SI4931DY-T1-E3 | Dual P-Channel 12-V (D-S) MOSFET |
| SI4933DY | Dual P-Channel 12-V (D-S) MOSFET |
| SI4953DY | Dual P-Channel 30-V(D-S) MOSFET |
| Si4953DY-T1 | Dual P-Channel 30-V(D-S) MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4931DY-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
| SI4931DY-T1-E3 | 功能描述:MOSFET 12V 8.9A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4931DY-T1-GE3 | 功能描述:MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4932DY-T1-GE3 | 功能描述:MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4933DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET |
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