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參數資料
| 型號： | SI4953DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual P-Channel 30-V(D-S) MOSFET |
| 中文描述： | 雙P溝道30 V的（副）MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | SI4953DY |
FEATURES
100% R
g
Tested
Si4953DY
Vishay Siliconix
Document Number: 70153
S-31726—Rev. E, 18-Aug-03
www.vishay.com
1
Dual P-Channel 30-V(D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.053 @ V
GS
= -10 V
-4.9
0.095 @ V
GS
= -4.5 V
-3.6
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
D
2
P-Channel MOSFET
Ordering Information:
Si4953DY
Si4953DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-4.9
T
A
= 70 C
-3.9
A
Pulsed Drain Current
I
DM
-30
Continuous Source Current (Diode Conduction)
a
I
S
-1.7
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
W
T
A
= 70 C
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
C/W
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com
Surface Mounted on FR4 Board, t
10 sec.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4953DY | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SO-8 |
| SI4953DY-E3 | 功能描述:MOSFET 30V 4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4953DY-T1 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC N T/R |
| SI4953DY-T1-E3 | 功能描述:MOSFET 30 Volt 4.9 Amp 2.0W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4955DY | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET P-CH 30V/20V 3.8A/5.3A 8SOIC - Rail/Tube |
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