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參數資料
| 型號： | SI4955DY-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs |
| 中文描述： | 非對稱雙P溝道30-V/20-V（副）的MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 137K |
| 代理商： | SI4955DY-T1-E3 |
Vishay Siliconix
Si4955DY
New Product
Document Number: 72241
S-61006-Rev. C, 12-Jun-06
www.vishay.com
1
Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs
FEATURES
TrenchFET
Power MOSFETs
Low Gate Drive (2.5 V) Capability For
Channel 2
APPLICATIONS
Game Station
- Load Switch
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
Ω
)
0.054 at V
GS
= - 10 V
0.100 at V
GS
= - 4.5 V
0.027 at V
GS
= - 4.5 V
0.035 at V
GS
= - 2.5 V
0.048 at V
GS
= - 1.8 V
I
D
(A)
- 5.0
Channel-1
- 30
- 3.7
Channel-2
- 20
- 7.0
- 6.2
- 5.2
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4955DY-T1-E3 (Lead (Pb)-free)
S
1
G
1
D
1
S
2
G
2
D
2
P-Channel MOSFET
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Steady State
- 30
Channel-2
Steady State
- 20
Unit
10 sec
10 sec
Drain-Source Voltage
V
DS
V
GS
V
Gate-Source Voltage
± 20
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
T
A
= 70 °C
I
D
- 5.0
- 3.8
- 7.0
- 5.3
A
- 4.0
- 3.0
- 5.6
- 4.2
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
- 20
- 1.7
- 0.9
- 1.7
- 0.9
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
P
D
2.0
1.1
2
1.1
W
1.3
0.7
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ
55
90
33
Channel-2
Typ
58
91
34
Unit
Max
62.5
110
40
Max
62.5
110
40
Maximum Junction-to-Ambient
a
t
≤
10 sec
Steady State
Steady State
R
thJA
°C/W
Maximum Junction-to-Foot (Drain)
R
thJF
RoHS
COMPLIANT
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4963BDY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL PP SO-8 |
| SI4963BDY_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 2.5-V (G-S) MOSFET |
| SI4963BDY-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 2.5-V (G-S) MOSFET |
| SI4963BDY-T1-E3 | 功能描述:MOSFET 20V 6.2A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4963BDY-T1-GE3 | 功能描述:MOSFET 20V 6.5A 2.0W 32mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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