- 您現在的位置：買賣IC網 > PDF目錄368617 > SI4953ADY (Vishay Intertechnology,Inc.) Dual p-channel SO-8 low-rDS(on) MOSFET PDF資料下載
參數資料
| 型號： | SI4953ADY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual p-channel SO-8 low-rDS(on) MOSFET |
| 中文描述： | 雙P溝道SO-8 低RDS（on）MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | SI4953ADY |
FEATURES
100% R
g
Tested
Si4953DY
Vishay Siliconix
Document Number: 70153
S-31726—Rev. E, 18-Aug-03
www.vishay.com
1
Dual P-Channel 30-V(D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.053 @ V
GS
= -10 V
-4.9
0.095 @ V
GS
= -4.5 V
-3.6
S
1
D
1
G
1
D
1
S
2
D
2
G
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
S
1
G
1
D
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
D
2
P-Channel MOSFET
Ordering Information:
Si4953DY
Si4953DY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
-30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-4.9
T
A
= 70 C
-3.9
A
Pulsed Drain Current
I
DM
-30
Continuous Source Current (Diode Conduction)
a
I
S
-1.7
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
W
T
A
= 70 C
1.3
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
a
R
thJA
62.5
C/W
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com
Surface Mounted on FR4 Board, t
10 sec.
相關PDF資料 |
PDF描述 |
|---|---|
| SI4953DY | Dual P-Channel Enhancement Mode MOSFET |
| SI4955DY-T1-E3 | Asymmetrical Dual P-Channel 30-V/20-V (D-S) MOSFETs |
| Si4963BDY-T1 | Dual P-Channel 2.5-V (G-S) MOSFET |
| SI4967DY | Dual P-Channel 1.8-V (G-S) MOSFET |
| SI4967DY-T1 | Dual P-Channel 1.8-V (G-S) MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI4953ADY_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI4953ADY-E3 | 功能描述:MOSFET 30V 4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4953ADY-T1 | 功能描述:MOSFET 30V 4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4953ADY-T1-E3 | 功能描述:MOSFET 30V 4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4953ADY-T1-GE3 | 功能描述:MOSFET 30V 3.9A 2.0W 53mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。