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參數資料
| 型號： | SI5406DC-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | N溝道的2.5 V（GS）的MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 98K |
| 代理商： | SI5406DC-T1 |
FEATURES
D
TrenchFET
r
Power MOSFETS: 2.5-V Rated
D
Low Thermal Resistance
APPLICATIONS
D
Load/Power Switching for Cell Phones and
Pagers
D
PA Switch in Cellular Devices
D
Battery Operated Systems
Si5406DC
Vishay Siliconix
Document Number: 71657
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
12
0.020 @ V
GS
= 4.5 V
0.025 @ V
GS
= 2.5 V
9.5
8.5
1206-8 ChipFET
t
D
D
D
G
D
D
D
S
1
Bottom View
D
G
S
N-Channel MOSFET
Marking Code
AC
XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si5406DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
9.5
6.9
T
A
= 85
_
C
6.8
4.9
A
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
2.1
1.1
Maximum Power Dissipation
a
T
A
= 25
_
C
P
D
2.5
1.3
W
T
A
= 85
_
C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
--55 to 150
_
C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
≤
5 sec
R
thJA
40
50
Steady State
80
95
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
20
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI5406DC-T1-E3 | 功能描述:MOSFET 12V 9.5A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5406DC-T1-GE3 | 功能描述:MOSFET 12V 9.5A 2.5W 20mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI54-100 | 制造商:DELTA 制造商全稱:Delta Electronics, Inc. 功能描述:SMT Power Inductor |
| SI5410DU | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 40-V (D-S) MOSFET |
| SI5410DU-T1-GE3 | 功能描述:MOSFET 40V 12A 31W 18mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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