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參數資料
型號: SI5435DC-T1
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: P-Channel 30-V (D-S) MOSFET
中文描述: P溝道30V的MOSFET
文件頁數: 1/4頁
文件大小: 101K
代理商: SI5435DC-T1
Si5435DC
Vishay Siliconix
Document Number: 71144
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
--30
0.050 @ V
GS
= --10 V
--5.6
0.080 @ V
GS
= --4.5 V
--4.0
1206-8 ChipFE
T
t
D
D
D
G
D
D
D
S
1
S
G
D
P-Channel MOSFET
Bottom View
Marking Code
BE
XX
Lot Traceability
and Date Code
Part # Code
Ordering Information:
Si5435DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
--30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 150
_
C)
a
T
A
= 25
_
C
I
D
--5.6
--4.1
T
A
= 85
_
C
--4.0
--2.9
A
Pulsed Drain Current
Continuous Source Current
a
I
DM
I
S
--30
--2.1
--1.1
Maximum Power Dissipation
a
T
A
= 25
_
C
T
A
= 85
_
C
P
D
2.5
1.3
W
1.3
0.7
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
--55 to 150
_
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
40
50
Steady State
80
95
_
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
20
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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