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參數資料
| 型號： | SI5473DC-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 12-V (D-S) MOSFET |
| 中文描述： | P溝道12 V的（副）MOSFET的 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 77K |
| 代理商： | SI5473DC-T1 |
FEATURES
TrenchFET Power MOSFETS
Low r
DS(on)
and Excellent Power Handling In
Compact Footprint
APPLICATIONS
Battery and Load Switch for Portable Devices
Si5473DC
Vishay Siliconix
New Product
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.027 @ V
GS
= -4.5 V
-8.1
-12
0.0335 @ V
GS
= -2.5 V
-7.3
0.045 @ V
GS
= -1.8 V
-6.3
1206-8 ChipFE
T
D
D
D
G
D
D
D
S
1
S
G
D
P-Channel MOSFET
Bottom View
Marking Code
BI
XXX
Lot Traceability
and Date Code
Part #
Code
Ordering Information:
Si5473DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-8.1
-5.9
T
A
= 85 C
-5.9
-4.3
A
Pulsed Drain Current
Continuous Source Current
a
I
DM
I
S
20
-2.1
-1.1
Maximum Power Dissipation
a
T
A
= 25 C
T
A
= 85 C
P
D
2.5
1.3
W
1.3
0.7
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
-55 to 150
C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
t
a
t
5 sec
R
thJA
40
50
Steady State
80
95
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
15
20
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI5473DC-T1-E3 | 功能描述:MOSFET 12V 8.1A 2.5W 27mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5473DC-T1-GE3 | 功能描述:MOSFET 12V 8.1A 2.5W 27mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5475BDC-T1-E3 | 功能描述:MOSFET 12V 6.0A 6.3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5475BDC-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:P-CHANNEL 12-V (D-S) MOSFET |
| SI5475BDC-T1-GE3 | 功能描述:MOSFET 12V 6.0A 6.3W 28mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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