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參數資料
| 型號： | SI5855DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Single P-Ch MOSFET; with integrated low-VF Schottky; |
| 中文描述： | 單P溝道MOSFET的總;集成的低室顫肖特基; |
| 文件頁數： | 1/6頁 |
| 文件大小： | 86K |
| 代理商： | SI5855DC |
FEATURES
TrenchFET Power MOSFETS
Ultra Low V
f
Schottky
Si5853DC Pin Compatible
APPLICATIONS
Charging Circuit in Portable Devices
Si5855DC
Vishay Siliconix
New Product
Document Number: 72232
S-31406—Rev. A, 07-Jul-03
www.vishay.com
1
P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.110 @ V
GS
= -4.5 V
0.160 @ V
GS
= -2.5 V
0.240 @ V
GS
= -1.8 V
-3.6
-20
-3.0
-2.4
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
V
f
(V)
Diode Forward Voltage
I
F
(A)
20
0.375 V @ 1 A
1.0
Bottom View
1206-8 ChipFE
T
A
A
S
G
K
K
D
D
1
Marking Code
JB
XXX
Lot Traceability
and Date Code
Part # Code
K
A
S
G
D
P-Channel MOSFET
Ordering Information:
Si5855DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage (MOSFET)
V
DS
V
KA
-20
Reverse Voltage (Schottky)
20
V
Gate-Source Voltage (MOSFET)
V
GS
8
Continuous Drain Current
(T
J
= 150 C) (MOSFET)
a
T
A
= 25 C
I
D
-3.6
-2.7
T
A
= 85 C
-2.6
-1.9
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a
I
DM
I
S
I
F
I
FM
-10
A
-1.8
-0.9
Average Foward Current (Schottky)
1.0
Pulsed Foward Current (Schottky)
7
Maximum Power Dissipation (MOSFET)
a
T
A
= 25 C
T
A
= 85 C
T
A
= 25 C
T
A
= 85 C
2.1
1.1
P
D
1.1
0.6
W
Maximum Power Dissipation (Schottky)
a
1.9
1.1
1.0
0.56
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
-55 to 150
C
260
Notes
a.
b.
Surface Mounted on 1” x1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI5855DC_04 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
| SI5855DC-T1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
| SI5855DC-T1-E3 | 功能描述:MOSFET 20V 3.6A 2.1W 110mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5856DC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
| SI5856DC_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
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