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參數資料
| 型號： | SI6421DQ-T1 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 7500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 98K |
| 代理商： | SI6421DQ-T1 |
Vishay Siliconix
Si6421DQ
New Product
Document Number: 72125
S-60422-Rev. B, 20-Mar-06
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)ID (A)
- 12
0.0105 at VGS = - 4.5 V
- 9.5
0.0135 at VGS = - 2.5 V
- 8.5
0.0175 at VGS = - 1.8 V
- 7.3
Si6421DQ
D
S
G
1
2
3
4
8
7
6
5
D
S
D
TSSOP-8
Top View
Ordering Information: Si6421DQ-T1
Si6421DQ-T1-E3 (Lead (Pb)-free)
S*
G
D
P-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
VDS
- 12
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
- 9.5
- 7.5
A
TA = 70 °C
- 7.5
- 6
Pulsed Drain Current (10 s Pulse Width)
IDM
- 30
Continuous Source Current (Diode Conduction)a
IS
- 1.5
- 0.95
Maximum Power Dissipationa
TA = 25 °C
PD
1.75
1.08
W
TA = 70 °C
1.14
0.69
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 10 sec
RthJA
55
70
°C/W
Steady State
95
115
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
38
50
Available
Pb-free
RoHS*
COMPLIANT
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相關代理商/技術參數 |
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| SI6423DQ | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
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| SI6423DQ-T1-GE3 | 功能描述:MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6426 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N-Channel PowerTrench MOSFET |
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