- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368618 > Si7439DP-T1-E3 (Vishay Intertechnology,Inc.) P-Channel 150-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | Si7439DP-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 150-V (D-S) MOSFET |
| 中文描述： | P通道150 -五（副）MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 56K |
| 代理商： | SI7439DP-T1-E3 |
FEATURES
TrenchFET Power MOSFETS
Ultra-Low On-Resistance Critical for Application
Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
100% R
g
and Avalanche Tested
APPLICATIONS
Active Clamp in Intermediate DC/DC Power
Supplies
Si7439DP
Vishay Siliconix
New Product
Document Number: 73106
S-41526—Rev. A, 16-Aug-04
www.vishay.com
1
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
150
0.090 @ V
GS
=
10 V
5.2
0.095 @ V
GS
=
6 V
5.0
D
S
G
P-Channel MOSFET
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information:
Si7439DP-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
5.2
3.0
T
A
= 70 C
4.1
2.4
Pulsed Drain Current
I
DM
50
A
Continuous Source Current (Diode Conduction)
a
I
S
4.2
1.6
Single Pulse Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
40
Single Pulse Avalanche Energy
E
AS
80
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.4
1.9
W
T
A
= 70 C
3.4
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
18
23
Steady State
50
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
相關PDF資料 |
PDF描述 |
|---|---|
| SI7445DP | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI7446DP | SPICE Device Model Si7446DP |
| SI7447DP | P-Channel 30-V (D-S) MOSFET |
| SI7452DP | N-Channel 60-V (D-S) Fast Switching MOSFET |
| SI7456DP | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7439DP-T1-GE3 | 功能描述:MOSFET 150V 5.2A 5.4W 90mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7440DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7440DP-T1 | 功能描述:MOSFET 30V 21A 5.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7440DP-T1-E3 | 功能描述:MOSFET 30V 21A 5.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7440DP-T1-GE3 | 功能描述:MOSFET 30V 21A 5.4W 6.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。