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參數資料
| 型號： | SI7447DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 30-V (D-S) MOSFET |
| 中文描述： | P溝道30V的MOSFET |
| 文件頁數： | 1/5頁 |
| 文件大小： | 45K |
| 代理商： | SI7447DP |
FEATURES
TrenchFET Power MOSFETS
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Battery and Load Switching
- Notebook Computers
- Notebook Battery Packs
Si7447DP
Vishay Siliconix
New Product
Document Number: 71970
S-21475—Rev. A, 26-Aug-02
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
-30
0.006 @ V
GS
= -10 V
-24
D
S
G
P-Channel MOSFET
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-30
Gate-Source Voltage
V
GS
25
V
T
A
= 25 C
-24
-14
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
- 19
-11
Pulsed Drain Current
I
DM
-60
A
continuous Source Current (Diode Conduction)
a
I
S
-4.5
-1.6
T
A
= 25 C
5.4
1.9
Maximum Power Dissipation
a
T
A
= 70 C
P
D
3.4
1.2
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
18
23
Maximum Junction-to-Ambient
a
Steady State
R
thJA
50
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7448DP | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
| SI7448DP | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 |
| SI7448DP-T1 | 功能描述:MOSFET 20V 22A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7448DP-T1-E3 | 功能描述:MOSFET 20V 22A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7448DP-T1-GE3 | 功能描述:MOSFET 20V 22A 5.2W 6.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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