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參數資料
| 型號： | SI7456DP-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | SI7456DP-T1 |
FEATURES
TrenchFET Power MOSFETS
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
PWM Optimized for Fast Switching
100% R
g
Tested
APPLICATIONS
Primary Side Switch for High Density DC/DC
Telecom/Server 48-V, Full-/Half-Bridge DC/DC
Industrial and 42-V Automotive
Si7456DP
Vishay Siliconix
Document Number: 71603
S-31989—Rev. D, 13-Oct-03
www.vishay.com
1
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
100
0.025 @ V
GS
= 10 V
0.028 @ V
GS
= 6.0 V
9.3
8.8
N-Channel MOSFET
G
D
S
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7456DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
100
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
9.3
5.7
T
A
= 85 C
6.7
4.1
A
Pulsed Drain Current
I
DM
40
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
30
Single Avalanche Energy (Duty Cycle
1%)
E
AS
45
mJ
Continuous Source Current (Diode Conduction)
a
I
S
4.3
1.6
A
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.2
1.9
W
T
A
= 85 C
2.7
1.0
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
19
24
Steady State
52
65
C/W
Maximum Junction-to-Case
Steady State
R
thJC
1.5
1.8
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7456DP-T1-E3 | 功能描述:MOSFET 100V 9.3A 5.2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7456DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI7456DP-T1-GE3 | 功能描述:MOSFET 100V 9.3A 5.2W 25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7456DP-TI-GE3 | 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8 制造商:Vishay Siliconix 功能描述:MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):8.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1.9W ;RoHS Compliant: Yes |
| SI7457DP-T1-E3 | 功能描述:MOSFET 100V 28A 83W 42mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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