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參數資料
| 型號： | SI7461DP-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) MOSFET |
| 中文描述： | P通道60 - V（下局副局長）MOSFET的 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 78K |
| 代理商： | SI7461DP-T1-E3 |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Automotive
12-V Boardnet
High-Side Switches
Motor Drives
Si7461DP
Vishay Siliconix
New Product
Document Number: 72567
S-40411—Rev. C, 15-Mar-04
www.vishay.com
1
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
60
0.0145 @ V
GS
=
10 V
14.4
0.019 @ V
GS
=
4.5 V
12.6
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
S
G
D
P-Channel MOSFET
Ordering Information: Si7461DP-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
14.4
8.6
T
A
= 70 C
11.5
6.9
Pulsed Drain Current
I
DM
60
A
Continuous Source Current (Diode Conduction)
a
I
S
4.5
1.6
Avalanche Current
L= 0 1 mH
L= 0.1 mH
I
AS
50
Single Pulse Avalanche Energy
E
AS
125
mJ
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5.4
1.9
W
T
A
= 70 C
3.4
1.2
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
18
23
Steady State
52
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.3
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7461DP-T1-GE3 | 功能描述:MOSFET 60V 14.4A 5.4W 14.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7462DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) MOSFET |
| SI7462DP-T1-E3 | 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7462DP-T1-GE3 | 功能描述:MOSFET 200V 4.1A 4.8W 130mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7463ADP-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Siliconix 功能描述:FET P-CH 40V 16.6A PPAK 8SOIC 制造商:Vishay Intertechnologies 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET 制造商:Vishay Intertechnologies 功能描述:MOSFET |
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