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參數資料
| 型號： | SI7485DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 77K |
| 代理商： | SI7485DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
APPLICATIONS
Battery Switch for Portable Devices
Si7485DP
Vishay Siliconix
New Product
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0073 @ V
GS
= -4.5 V
-20
-20
0.0090 @ V
GS
= -2.5 V
-18
0.013 @ V
GS
= -1.8 V
-15
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
S
G
D
P-Channel MOSFET
Ordering Information: Si7485DP-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-20
-12.5
T
A
= 70 C
-16.5
-9.5
A
Pulsed Drain Current
I
DM
-50
continuous Source Current (Diode Conduction)
a
I
S
-4.5
-1.6
Maximum Power Dissipation
a
T
A
= 25 C
P
D
5
1.8
W
T
A
= 70 C
3.2
1.1
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
20
25
Steady State
54
68
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.7
2.2
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| SI7485DP-T1 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI7491DP | P-Channel 30-V (D-S) MOSFET |
| Si7501DN | N- and p-channel VDS = 30 V pair |
| SI7601DN | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI7664DP | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7485DP-T1 | 功能描述:MOSFET 20V 20A 5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7485DP-T1-E3 | 功能描述:MOSFET 20V 20A 5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7485DP-T1-GE3 | 功能描述:MOSFET 20V 20A 5.0W 7.3mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7489DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 100-V (D-S) MOSFET |
| SI7489DP_13 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 100-V (D-S) MOSFET |
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