- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368619 > SI7664DP (Vishay Intertechnology,Inc.) Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PDF資料下載
參數(shù)資料
| 型號： | SI7664DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 188K |
| 代理商： | SI7664DP |
Vishay Siliconix
SPICE Device Model Si7664DP
N-Channel 30-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
S-60180
Rev. A, 13-Feb-06
1
www.vishay.com
Document Number: 74149
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7705DN | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| SI7802DN | N-Channel 250-V (D-S) MOSFET |
| SI7806BDN | N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7806BDN-T1-E3 | N-Channel 30-V (D-S) Fast Switching MOSFET |
| SI7840BDP | Si7840BDP vs. Si7840DP Specification Comparison |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7664DP-T1-E3 | 功能描述:MOSFET 30V 40A 83W 3.1mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7664DP-T1-GE3 | 功能描述:MOSFET 30V 40A 83W 3.1mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7668ADP-T1 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 30V 31A 8PIN PWRPAK SO - Tape and Reel |
| SI7668ADP-T1-E3 | 功能描述:MOSFET 30V 40A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7668ADP-T1-GE3 | 功能描述:MOSFET 30V 40A 83W 3.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。