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參數資料
| 型號： | SI7882DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 中文描述： | N溝道減少Qg和，快速開關MOSFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | SI7882DP |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package with Low 1.07-mm Profile
PWM Optimized for High Efficiency
APPLICATIONS
Point-of-Load Synchronous Rectifier
- 5-V or 3.3-V BUS Step Down
- Q
g
Optimized for 500-kHz Operation
Synchronous Buck, Shoot-Thru Resistant
Si7882DP
Vishay Siliconix
New Product
Document Number: 71858
S-21194—Rev. C, 29-Ju1-02
www.vishay.com
1
N-Channel Reduced Q
g
, Fast Switching MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0055 @ V
GS
= 4.5 V
0.008 @ V
GS
= 2.5 V
22
12
18
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
12
Gate-Source Voltage
V
GS
8
V
T
A
= 25 C
22
13
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
18
11
Pulsed Drain Current
I
DM
50
A
Continuous Source Current (Diode Conduction)
a
I
S
4.1
1.6
T
A
= 25 C
5
1.9
Maximum Power Dissipation
a
T
A
= 70 C
P
D
3.2
1.2
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
20
25
Maximum Junction-to-Ambient (MOSFET)
a
Steady State
R
thJA
55
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
2.0
2.6
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7882DP-T1 | 功能描述:MOSFET 12V 22A 1.9W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7882DP-T1-E3 | 功能描述:MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7882DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI7882DP-T1-GE3 | 功能描述:MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7884BDP-T1-E3 | 功能描述:MOSFET 40V 58A 46W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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