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參數資料
| 型號： | SIC417CD-T1-E3 |
| 廠商： | Vishay Siliconix |
| 文件頁數： | 9/19頁 |
| 文件大小： | 922K |
| 描述： | IC REG DL BCK/LINEAR SYNC 32MLPQ |
| 標準包裝： | 1 |
| 系列： | microBUCK® |
| 拓撲： | 降壓（降壓）同步（1），線性（LDO）（1） |
| 功能： | 任何功能 |
| 輸出數： | 2 |
| 頻率 - 開關： | 200kHz ~ 1MHz |
| 電壓/電流 - 輸出 1： | 0.5 V ~ 5.5 V，10A |
| 電壓/電流 - 輸出 2： | 0.75 V ~ 5.25 V，150mA |
| 帶 LED 驅動器： | 無 |
| 帶監控器： | 無 |
| 帶序列發生器： | 無 |
| 電源電壓： | 3 V ~ 28 V |
| 工作溫度： | -25°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 32-PowerWFQFN |
| 供應商設備封裝： | PowerPAK? MLP55-32 |
| 包裝： | 標準包裝 |
| 其它名稱： | SIC417CD-T1-E3DKR |
Vishay Siliconix
SiC417
Document Number: 69062
S10-1367-Rev. D, 14-Jun-10
www.vishay.com
9
Ultrasonic Power-Save Operation
The SiC417 provides ultra-sonic power-save operation at
light loads, with the minimum operating frequency fixed at
25 kHz. This is accomplished using an internal timer that
monitors the time between consecutive high-side gate
pulses.
If the time exceeds 40 祍, DL drives high to turn the low-side
MOSFET on. This draws current from V
OUT
through the
inductor, forcing both V
OUT
and V
FB
to fall. When V
FB
drops
to the 500 mV threshold, the next DH on-time is triggered.
After the on-time is completed the high-side MOSFET is
turned off and the low-side MOSFET turns on, the low-side
MOSFET remains on until the inductor current ramps down
to zero, at which point the low-side MOSFET is turned off.
Because the on-times are forced to occur at intervals no
greater than 40 祍, the frequency will not fall below ~ 25 kHz.
Figure 5 shows ultra-sonic power-save operation.
Benefits of Ultrasonic Power-Save
Having a fixed minimum frequency in power-save has some
significant advantages as below:
" The minimum frequency of 25 kHz is outside the audible
range of human ear. This makes the operation of the
SiC417 very quiet.
" The output voltage ripple seen in power-save mode is
significant lower than conventional power-save, which
improves efficiency at light loads.
" Lower ripple in power-save also makes the power
component selection easier.
Figure 6 shows the behavior under power-save and
continuous conduction mode at light loads.
Smart Power-Save Protection
Active loads may leak current from a higher voltage into the
switcher output. Under light load conditions with power-
savepower-save enabled, this can force V
OUT
to slowly rise
and reach the over-voltage threshold, resulting in a hard
shutdown. Smart power-save prevents this condition.
When the FB voltage exceeds 10 % above nominal (exceeds
550 mV), the device immediately disables power-save, and
DL drives high to turn on the low-side MOSFET. This draws
current from V
OUT
through the inductor and causes V
OUT
to
fall. When V
FB
drops back to the 500 mV trip point, a normal
t
ON
switching cycle begins.
This method prevents a hard OVP shutdown and also cycles
energy from V
OUT
back to V
IN
. It also minimizes operating
power by avoiding forced conduction mode operation.
Figure 7 shows typical waveforms for the smart power-save
feature.
Figure 4 - Forced Continuous Mode Operation
Figure 5 - Ultrasonic power-save Operation
FB ripple
voltage (VFB)
Inductor
current
DC load current
FB threshold
(500 mV)
DH
DL
On-time
(t
ON
)
DH on-time is triggered when
V
FB
reaches the FB threshold
DL drives high when on-time is completed.
DL remains high until V
FB
falls to the FB threshold.
FB ripple
voltage (VFB)
Inductor
current
(0A)
FB threshold
(500 mV)
DH
DL
On-time
(t
ON
)
DH on-time is triggered when
V
FB
reaches the FB threshold
After the 40 祍 time-out, DL drives high if V
FB
has not reached the FB threshold.
minimum f
SW
~
25 kHz
Figure 6 - Ultrasonic Power-Save Operation Mode
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