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參數資料
| 型號： | SIGC16T120CS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 72K |
| 代理商： | SIGC16T120CS |
SIGC16T120CS
Edited by INFINEON Technologies AI PS DD HV3, L 7131-S, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology
180μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
SGP07N120
Applications:
drives, SMPS, resonant
applications
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
SIGC16T120CS
MECHANICAL PARAMETER:
1200V
8A
4.04 x 4 mm
2
sawn on foil
Q67050-A4113
Raster size
4.04 x 4
Area total / active
16.16 / 10.4
Emitter pad size
1.88x2.18
Gate pad size
0.71x1.08
mm
2
Thickness
200
μm
Wafer size
150
mm
Flat position
0
deg
Max.possible chips per wafer
898 pcs
Passivation frontside
Photoimide
Emitter metalization
3200 nm Al Si 1%
Collector metalization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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