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參數(shù)資料
| 型號(hào)： | SIGC18T60SNC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 76K |
| 代理商： | SIGC18T60SNC |
SIGC18T60SNC
Edited by INFINEON Technologies AI PS DD HV3, L 7242-S, Edition 2, 28.11.2003
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
SGP20N60
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-S2856-
A001
Q67041-S2856-
A002
SIGC18T60SNC
600V
20A
4.3 x 4.3 mm
2
sawn on foil
SIGC18T60SNC
600V
20A
4.3 x 4.3 mm
2
unsawn
MECHANICAL PARAMETER:
Raster size
4.3 x 4.3
Area total / active
18.49 / 14.3
Emitter pad size
2.48 x 2.98
Gate pad size
0.7 x 1.08
mm
2
Thickness
100
μm
Wafer size
150
mm
Flat position
270
deg
Max.possible chips per wafer
796
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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