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參數資料
| 型號： | SIGC25T120C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | SIGC25T120C |
SIGC25T120C
Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology
200μm chip
positive temperature coefficient
easy paralleling
This chip is used for:
BUP 213
Applications:
drives
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
C67078-A4674-
A001
SIGC25T120C
1200V
15A
5.71 x 4.53 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
5.71 x 4.53
Emitter pad size
2 x ( 2.18 x 1.6 )
Gate pad size
1.09 x 0.68
Area total / active
25.9 / 18.7
mm
2
Thickness
180
μm
Wafer size
150
mm
Flat position
270
grd
Max.possible chips per wafer
555 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關代理商/技術參數 |
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|---|---|
| SIGC25T120CL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T120CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T120CS2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T60NC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology 100μm chip short circuit prove |
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