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參數(shù)資料
| 型號(hào)： | SIGC61T60NC |
| 廠(chǎng)商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約IGBT芯片技術(shù) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 78K |
| 代理商： | SIGC61T60NC |
SIGC61T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7452-M, Edition 2, 28.11.2003
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
IGBT-Modules
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-A4160-
A001
SIGC61T60NC
600V
75A
6.99 x 8.79 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
6.99 x 8.79
Area total / active
61.44 / 53.7
Emitter pad size
2x( 2.98x5.48 )
Gate pad size
0.8 x 1.5
mm
2
Thickness
100
μm
Wafer size
150
mm
Flat position
90
deg
Max.possible chips per wafer
200
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關(guān)代理商/技術(shù)參數(shù) |
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| SIGC68T170R3 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:IGBT3 Chip |
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| SIGC81T120R2C | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC81T120R2CL | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC81T120R2CS | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
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