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參數資料
| 型號： | HN1K05FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山類型 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 121K |
| 代理商： | HN1K05FU |
HN1K05FU
2002-01-16
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K05FU
For Portable Devices
High Speed Switching Applications
Interface Applications
High input impedance and extremely low drive current.
V
th
is low and it is possible to drive directly at low-voltage CMOS.
: V
th
= 0.5 to 1.0 V
Suitable for high-density mounting because of a compact package.
Maximum Ratings
(Ta 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DS
20
V
Gate-source voltage
V
GSS
10
V
DC drain current
I
D
100
mA
Drain power dissipation
P
D
(Note)
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note: TOTAL rating
Electrical Characteristics
(Ta 25°C) (Q1, Q2 common)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
10 V, V
DS
0 V
1
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
100 A, V
GS
0 V
20
V
Drain cut-off current
I
DSS
V
DS
20 V, V
GS
0 V
1
A
Gate threshold voltage
V
th
V
DS
1.5 V, I
D
0.1 mA
0.5
1
V
Forward transfer admittance
Y
fs
V
DS
1.5 V, I
D
10 mA
35
70
mS
Drain-Source ON resistance 1
R
DS (ON) 1
I
D
1 mA, V
GS
1.2 V
15
50
Drain-Source ON resistance 2
R
DS (ON) 2
I
D
10 mA, V
GS
1.5 V
10
40
Drain-Source ON resistance 3
R
DS (ON) 3
I
D
10 mA, V
GS
2.5 V
7
28
Input capacitance
C
iss
V
DS
1.5 V, V
GS
0 V, f 1 MHz
12
pF
Reverse transfer capacitance
C
rss
V
DS
1.5 V, V
GS
0 V, f 1 MHz
3.4
pF
Output capacitance
C
oss
V
DS
1.5 V, V
GS
0 V, f 1 MHz
12
pF
t
on
V
DD
1.5 V, I
D
10 mA,
V
GS
0 to 1.5 V
0.35
Switching time
t
off
V
DD
1.5 V, I
D
10 mA,
V
GS
0 to 1.5 V
0.2
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg
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