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參數資料
型號: SPB21N50C3
廠商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷馬鞍山⑩功率晶體管
文件頁數: 1/13頁
文件大?。?/td> 341K
代理商: SPB21N50C3
2003-07-02
Page 1
SPP21N50C3, SPB21N50C3
SPI21N50C3, SPA21N50C3
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best
R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
V
DS
@
T
jmax
R
DS(on)
I
D
560
V
A
0.19
21
P-TO262-3-1
P-TO263-3-2
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
21N50C3
21N50C3
21N50C3
21N50C3
Type
SPP21N50C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4565
SPB21N50C3
P-TO263-3-2
Q67040-S4566
SPI21N50C3
P-TO262-3-1
Q67040-S4564
SPA21N50C3
P-TO220-3-31 Q67040-S4585
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
21
13.1
21
1)
13.1
1)
A
I
D puls
E
AS
63
63
A
I
D
=10A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=21A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
690
690
mJ
E
AR
1
1
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
21
21
A
±20
±
30
208
±20
±
30
34.5
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SSPP_B
-55...+150
°C
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相關代理商/技術參數
參數描述
SPB21N50C3_05 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
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