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參數資料
| 型號： | ISL6605IB |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:55; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55 |
| 中文描述： | 4 A HALF BRDG BASED MOSFET DRIVER, PDSO8 |
| 封裝： | PLASTIC, MS-012AA, SOIC-8 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 302K |
| 代理商： | ISL6605IB |
1
FN9091.5
ISL6605
Synchronous Rectified MOSFET Driver
The ISL6605 is a high frequency, MOSFET driver optimized
to drive two N-Channel power MOSFETs in a synchronous-
rectified buck converter topology. This driver combined with
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM
controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and
minimizes low driver switching losses for high MOSFET gate
capacitance and high switching frequency applications. Each
driver is capable of driving a 3000pF load with an 8ns
propagation delay and less than 10ns transition time. This
product implements bootstrapping on the upper gate with an
internal bootstrap Schottky diode, reducing implementation
cost, complexity, and allowing the use of higher
performance, cost effective N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
The ISL6605 features 4A typical sink current for the lower
gate driver, which is capable of holding the lower MOSFET
gate during the Phase node rising edge to prevent shoot-
through power loss caused by the high dv/dt of the Phase
node.
The ISL6605 also features a Three-State PWM input that,
working together with Intersil multi-phase PWM controllers,
will prevent a negative transient on the output voltage when
the output is being shut down. This feature eliminates the
Schottky diode that is usually seen in a microprocessor
power system for protecting the microprocessor from
reversed-output-voltage damage.
Features
Drives Two N-Channel MOSFETs
Adaptive Shoot-Through Protection
0.4
On-Resistance and 4A Sink Current Capability
Supports High Switching Frequency
- Fast Output Rise and Fall Time
- Ultra Low Propagation Delay 8ns
Three-State PWM Input for Power Stage Shutdown
Internal Bootstrap Schottky Diode
Low Bias Supply Current (5V, 30μA)
Enable Input
QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline.
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile.
Pb-Free Available (RoHS Compliant)
Applications
Core Voltage Supplies for Intel and AMD
Microprocessors
High Frequency Low Profile DC-DC Converters
High Current Low Voltage DC-DC Converters
Synchronous Rectification for Isolated Power Supplies
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Pinouts
UGATE
BOOT
PWM
GND
1
2
3
4
8
7
6
5
PHASE
EN
VCC
LGATE
TOP VIEW
8 PIN SOIC
BOOT
G
L
U
EN
VCC
PWM
P
7
8
4
3
1
2
6
6
5
TOP VIEW
8 PIN SOIC
Data Sheet
January 4, 2005
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002-2005. All Rights Reserved
Intel is a registered trademark of Intel Corporation.
AMD is a registered trademark of Advanced Micro Devices, Inc.
All other trademarks mentioned are the property of their respective owners.
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|---|---|
| ISL6605CB-T | Synchronous Rectified MOSFET Driver |
| ISL6605CR-T | Synchronous Rectified MOSFET Driver |
| ISL6605CRZ | Synchronous Rectified MOSFET Driver |
| ISL6605CRZA | Synchronous Rectified MOSFET Driver |
| ISL6605IRZ | Synchronous Rectified MOSFET Driver |
相關代理商/技術參數 |
參數描述 |
|---|---|
| ISL6605IB-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| ISL6605IBZ | 功能描述:IC DRIVER MOSFET DUAL SYNC 8SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:95 系列:- 配置:半橋 輸入類型:PWM 延遲時間:25ns 電流 - 峰:1.6A 配置數:1 輸出數:2 高端電壓 - 最大（自引導啟動）:118V 電源電壓:9 V ~ 14 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:管件 產品目錄頁面:1282 (CN2011-ZH PDF) 其它名稱:*LM5104M*LM5104M/NOPBLM5104M |
| ISL6605IBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應商設備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| ISL6605IR | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅動器 - 外部開關 系列:- 標準包裝:50 系列:- 配置:低端 輸入類型:非反相 延遲時間:40ns 電流 - 峰:9A 配置數:1 輸出數:1 高端電壓 - 最大（自引導啟動）:- 電源電壓:4.5 V ~ 35 V 工作溫度:-40°C ~ 125°C 安裝類型:表面貼裝 封裝/外殼:TO-263-6，D²Pak（5 引線+接片），TO-263BA 供應商設備封裝:TO-263 包裝:管件 |
| ISL6605IRR5168 | 制造商:Intersil Corporation 功能描述: |
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