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參數資料
| 型號： | SKP02N120 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology( NPT 技術中的快速S-IGBT) |
| 中文描述： | 快速的S -不擴散核武器條約IGBT的技術（不擴散技術中的快速第S - IGBT的） |
| 文件頁數： | 1/13頁 |
| 文件大小： | 390K |
| 代理商： | SKP02N120 |
Preliminary
SKP02N120
SKB02N120
Power Semiconductors
1
Mar-00
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
G
C
E
40% lower
E
off
compared to previous generation
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Type
V
CE
I
C
E
off
T
j
Package
Ordering Code
SKP02N120
1200V
2A
0.11mJ
150
°
C
TO-220AB
Q67040-S4278
SKB02N120
TO-263AB(D2PAK)
Q67040-S4279
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V, 100V
≤
V
CC
≤
1200V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V
CE
I
C
1200
V
A
6.2
2.8
I
Cpuls
-
9.6
9.6
I
F
4.5
2
I
Fpuls
V
GE
t
SC
9
±
20
10
V
μ
s
P
tot
62
W
T
j
,
T
stg
-
-55...+150
260
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SKP02N120XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 6.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 6.2A 62W TO220-3 |
| SKP02N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 2A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKP02N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6A 30W TO220-3 |
| SKP04N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKP04N60 | 制造商:Infineon Technologies AG 功能描述:IGBT FAST |
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