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參數(shù)資料
| 型號： | SKP02N60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 274K |
| 代理商： | SKP02N60 |
SKP02N60
SKB02N60
1
Mar-00
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
G
C
E
75% lower
E
off
compared to previous generation combined with
low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SKP02N60
600V
2A
2.2V
150
°
C
TO-220AB
Q67040-S4214
SKB02N60
TO-263AB
Q67040-S4215
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
V
CE
I
C
600
V
A
6.0
2.9
I
Cpuls
-
12
12
I
F
6.0
2.9
I
Fpuls
V
GE
t
SC
12
±
20
10
V
μ
s
P
tot
30
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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| SKB06N60HS | High Speed IGBT in NPT-technology |
| SKB06N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKP06N60 | D-Subminiature Connector; Connector Type:D-Sub; Enclosure Material:Plastic RoHS Compliant: Yes |
| skb06n60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| SKP06N60 | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKP02N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6A 30W TO220-3 |
| SKP04N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKP04N60 | 制造商:Infineon Technologies AG 功能描述:IGBT FAST |
| SKP04N60XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 9.4A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 9.4A 50W TO220-3 |
| SKP06N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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