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參數(shù)資料
| 型號(hào)： | SKP06N60 |
| 廠商： | SIEMENS AG |
| 英文描述： | Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT) |
| 中文描述： | 快速的S - IGBT的不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管（不擴(kuò)散技術(shù)中的快速第S - IGBT技術(shù)） |
| 文件頁(yè)數(shù)： | 1/13頁(yè) |
| 文件大小： | 268K |
| 代理商： | SKP06N60 |
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SKP06N60
SKB06N60
1
Mar-00
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
G
C
E
75% lower
E
off
compared to previous generation combined with
low conduction losses
Short circuit withstand time – 10
μ
s
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel EmCon diode
Type
V
CE
I
C
V
CE(sat
)
T
j
Package
Ordering Code
SKP06N60
600V
6A
2.3V
150
°
C
TO-220AB
Q67040-S4230
SKB06N60
TO-263AB
Q67040-S4231
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
V
CE
I
C
600
V
A
12
6.9
I
Cpuls
-
24
24
I
F
12
6
I
Fpuls
V
GE
t
SC
24
±
20
10
V
μ
s
P
tot
68
W
T
j
,
T
stg
-55...+150
°
C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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