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參數資料
| 型號： | SKW20N60HS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed IGBT in NPT-technology |
| 中文描述： | 在不擴散核武器條約高高速IGBT的技術 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 356K |
| 代理商： | SKW20N60HS |
^
High Speed IGBT in NPT-technology
30% lower
E
off
compared to previous generation
Short circuit withstand time – 10
μ
s
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E
off
increase with temperature
- very tight parameter distribution
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1
for target applications
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
V
CE
I
C
SKW20N60HS
Power Semiconductors
1
Rev. 2.2 June 06
E
off
T
j
Marking
Package
SKW20N60HS
600V
20
240μJ 150
°
C K20N60HS
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage static
V
CE
I
C
600
36
20
V
A
I
Cpuls
-
80
80
I
F
40
20
I
Fpuls
V
GE
80
±
20
±
30
transient (
t
p
<1μs,
D
<0.05)
V
μ
s
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150
°
C
Power dissipation
T
C
= 25
°
C
Operating junction and storage temperature
t
SC
10
P
tot
178
W
T
j
,
T
stg
T
j(tl)
-
-55...+150
Time limited operating junction temperature for
t
< 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
175
260
°
C
1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
PG-TO-247-3-21
G
C
E
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SKW20N60HS_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation |
| SKW20N60HSFKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 36A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 36A 178W TO247-3 |
| SKW25N120 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 25A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKW25N120 | 制造商:Infineon Technologies AG 功能描述:IGBT FAST |
| SKW25N120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
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