- 您現在的位置：買賣IC網 > PDF目錄26881 > SLD-70C1A PHOTO DIODE PDF資料下載
參數資料
| 型號： | SLD-70C1A |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁數： | 1/1頁 |
| 文件大小： | 28K |
| 代理商： | SLD-70C1A |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-70C1
Planar Photodiode
Features
Planar Photodiode
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
Multiple dark current ranges available
Description
The Silonex SLD-70C1 planar photodiode is designed
to operate in either photoconductive or photovoltaic
modes. High sensitivity and low dark current allow use
in even low irradiance applications. The photodiode is
supplied on a ceramic base with a clear epoxy dome
package.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +75°C
Operating Temperature
-20
°C to +75°C
Soldering Temperature (3)
260
°C
Notes: (1) Ee = source @ 2854
°K.
(2) Ee = source @
λ = 880 nm
(3) >2 mm from case for < 5 sec.
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
Clear Epoxy
Anode
Cathode
Dimensions in mm. (+/- 0.2)
Red dot
25.4 Min
6.3
7.2
3.4
Max
0.50-0.52
5.1
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100°
120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
120
180
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current:
SLD-70C1A
100
nA
VR=100mV, Ee=0
SLD-70C1B
100
nA
VR=5V, Ee=0
SLD-70C1C
10
nA
VR=5V, Ee=0
SLD-70C1D
1
nA
VR=5V, Ee=0
SLD-70C1E
250
pA
VR=5V, Ee=0
CJ
Junction Capacitance
50
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
s
VR=5V, RL=1k (2)
tF
Fall Time
1.5
s
VR=5V, RL=1k (2)
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR=100A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications subject to change without notice.
101421 REV 3
相關PDF資料 |
PDF描述 |
|---|---|
| SLD-70IR1D | PHOTO DIODE |
| SLD-70IR1C | PHOTO DIODE |
| SLD104AV | 780 nm, LASER DIODE |
| SLD104BUL | 780 nm, LASER DIODE |
| SLD131UL | 790 nm, LASER DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SLD-70C2 | 制造商:SILONEX 制造商全稱:SILONEX 功能描述:Planar Photodiode |
| SLD-70C2A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode, Planar; Clear Epoxy Dome Package; 700 muA (Typ.); 0.40 V (Typ.) |
| SLD-70E-470-1.4 | 制造商:Advanced Photonix Inc 功能描述:WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC |
| SLD-70E-525-1.4 | 制造商:ADVANCED PHOTONIX 功能描述:WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC |
| SLD-70E-660-1.4 | 制造商:ADVANCED PHOTONIX 功能描述:WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC |
發布緊急采購，3分鐘左右您將得到回復。