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參數資料
型號: SM6G45A
廠商: Toshiba Corporation
英文描述: TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
文件頁數: 1/5頁
文件大?。?/td> 232K
代理商: SM6G45A
SM6G45,SM6J45,SM6G45A,SM6J45A
2001-07-13
1
TOSHIBA BI
DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM6G45,SM6J45,SM6G45A,SM6J45A
AC POWER CONTROL APPLICATIONS
Repetitive Peak Off
State Voltage : V
DRM
= 400, 600V
R.M.S ON
State Current
High Commutating (dv / dt)
MAXIMUM RATINGS
: I
T (RMS)
= 6A
CHARACTERISTIC
SYMBOL
RATING
UNIT
SM6G45
SM6G45A
400
Repetitive Peak Off
State Voltage
SM6J45
SM6J45A
V
DRM
600
V
R.M.S On
State Current
(Full Sine Waveform Tc = 104°C)
I
T (RMS)
6
A
60 (50Hz)
Peak One Cycle Surge On
State
Current (Non
Repetitive)
I
TSM
66 (60Hz)
A
I
2
t Limit Value
I
2
t
18
A
2
s
Critical Rate of Rise of On
State
Current
di / dt
50
A / μs
Peak Gate Power Dissipation
P
GM
5
W
Average Gate Power Dissipation
P
G (AV)
0.5
W
Peak Gate Voltage
V
GM
10
V
Peak Gate Current
I
GM
2
A
Junction Temperature
T
j
40~125
°C
Storage Temperature Range
T
stg
40~125
°C
TO
220AB
13
10G1A
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
Unit: mm
相關PDF資料
PDF描述
SM6J45 Heat Sink; Package/Case:TO-220; Body Material:Aluminum; Thermal Resistance:27.3 C/W; Color:Black; Leaded Process Compatible:No; Mounting Type:Through Hole; Peak Reflow Compatible (260 C):No; Size/Dimensions:0.750H x 0.500W"
SM6J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
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