- 您現在的位置：買賣IC網 > PDF目錄231057 > SMCJ10AE3/TR13 (MICROSEMI CORP-SCOTTSDALE) 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB PDF資料下載
參數資料
| 型號： | SMCJ10AE3/TR13 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 475K |
| 代理商： | SMCJ10AE3/TR13 |
1500W Transient Voltage Suppressor (TVS) protection device
www.Microsemi.com
1/6
Copyright
2009
Aug Rev A
SMCJ5.0e3 to SMCJ440CAe3
Main product characteristics
Description and applications
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands
and special applications.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Qualified to automotive grade – AEC Q101
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.
Maximum ratings and characteristics
(1)
Symbol
Parameter
Value
Unit
PPPM
Peak power dissipation with a 10/1000s waveform
(2)(3) (fig.1)
1500
W
IPPM
Peak pulse current with a 10/1000s waveform
(2) (fig. 3)
See next table
A
IFSM
Non repetitive peak forward surge current
(8.3ms single half sine wave) unidirectional only
(4)
200
A
RΘJL
Typical thermal resistance junction to lead
15
C/W
RΘJA
Typical thermal resistance junction to ambient
75
C/W
TSTG
Storage temperature
-55 to +150
C
TJ
Junction temperature
-55 to +150
C
(1) All ratings at 25C unless specified otherwise
(2) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25C per Fig. 2. rating is 300W above 78V.
(3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)
(4) Mounted on minimum recommended pad layout
(5) VF=3.5V for devices of VBR < 220V and VF=5.0V maximum for devices of VBR > 220V
VWM
5.0V – 440V
VBR(min) - VBR(max)
6.40V – 543V
IPP
156.3A – 2.1A
VCL(MAX)
9.6V – 713V
PPP
1500W
RoHS
COMPLIANT
DO-214AB (SMC)
相關PDF資料 |
PDF描述 |
|---|---|
| SMCJ220CAE3/TR13 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ250AE3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ26CE3/TR13 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ70CAE3/TR13 | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCJ8.5E3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SMCJ10AHE3/57T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ10AHE3/59T | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ10AHE3/9AT | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ10AHE3/9CT | 功能描述:TVS 二極管 - 瞬態電壓抑制器 1.5KW 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SMCJ10A-M3/57T | 制造商:Vishay Semiconductors 功能描述:1.5KW,10V 5%,UNIDIR,SMC TVS |
發布緊急采購，3分鐘左右您將得到回復。