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參數資料
| 型號： | SML100W18 |
| 英文描述： | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)) |
| 中文描述： | N溝道增強模式高壓功率MOSFET（減振鋼板基本：1000V的ID已（續）：17.3A，的Rds（on）：0.57Ω）（不適用溝道增強型，高電壓功率馬鞍山場效應管（減振鋼板基本：1000V的ID已（續）：9A條的Rds（on）：1.100Ω）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 26K |
| 代理商： | SML100W18 |
SML100W18
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1000
17.3
69.2
±30
±40
400
3.2
–55 to 150
300
17.3
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 16.71mH, R
G
= 25
, Peak I
L
= 17.3A
V
DSS
I
D(cont)
R
DS(on)
0.570
1000V
17.3A
Faster Switching
Lower Leakage
TO–267 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
TO–267 Package Outline.
Dimensions in mm (inches)
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