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參數資料
| 型號： | SML60A16 |
| 英文描述： | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:600V,Id(cont):16A,Rds(on):0.35Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:600V,Id(cont):16A,Rds(on):0.35Ω)) |
| 中文描述： | N溝道增強模式高壓功率MOSFET（減振鋼板基本：600V的，身份證（續）：16A條的Rds（on）：0.35Ω）（不適用溝道增強型，高電壓功率馬鞍山場效應管（減振鋼板基本：600V的，身份證（續）：16A條的Rds（on）：0.35Ω）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | SML60A16 |
SML60A16
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
6/99
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
600
16
64
±30
±40
200
1.6
–55 to 150
300
16
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 9.45mH, R
G
= 25
, Peak I
L
= 16A
V
DSS
I
D(cont)
R
DS(on)
0.350
600V
16A
Faster Switching
Lower Leakage
TO–3 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
1
2
(c3
25.15 (0.99)
10.67 (0.42)
3
3
2
3
1
1
3.84 (0.151)
4.09 (0.161)
1
1
7.92 (0.312)
2
(
m
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
TO–3 Package Outline.
Dimensions in mm (inches)
Pin 1 – Gate
Pin 2 – Source
Case – Drain
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|---|---|
| SML60A18 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:600V,Id(cont):17.5A,Rds(on):0.32Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:600V,Id(cont):17.5A,Rds(on):0.32Ω)) |
| SML60H16 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:600V,Id(cont):15.5A,Rds(on):0.37Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:600V,Id(cont):15.5A,Rds(on):0.37Ω)) |
| SML60H20 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:600V,Id(cont):20A,Rds(on):0.27Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:600V,Id(cont):20A,Rds(on):0.27Ω)) |
| SML80A12 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)) |
| SML80H12 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N溝道增強型,高電壓功率MOS場效應管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SML60A18 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60B16 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60B18 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60B21 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML60B25 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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