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參數資料
| 型號： | SPA11N60C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 160K |
| 代理商： | SPA11N60C3 |
2002-08-12
Page 1
SPP11N60C2, SPB11N60C2
SPA11N60C2
Final data
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
Ultra low effective capacitances
Product Summary
V
DS
@
T
jmax
650
0.38
11
V
A
R
DS(on)
I
D
P-TO220-3-31
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31
1
2
3
Marking
11N60C2
11N60C2
11N60C2
Type
SPP11N60C2
SPB11N60C2
SPA11N60C2
Package
P-TO220-3-1
P-TO263-3-2
P-TO220-3-31 Q67040-S4332
Ordering Code
Q67040-S4295
Q67040-S4298
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
11
1)
7
1)
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
11
7
A
I
D puls
E
AS
22
340
22
340
A
mJ
I
D
=5.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax2)
I
D
=11A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Reverse diode d
v
/d
t
E
AR
0.6
0.6
I
AR
d
v
/d
t
11
6
11
6
A
V/ns
I
S
= 11 A,
V
DS
<
V
DD
, d
i
/d
t
=100A/
μ
s,
T
jmax
=150°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
V
GS
V
GS
P
tot
T
j ,
T
stg
±20
±
30
125
±20
±
30
33
V
W
SPP_B
-55...+150
°C
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