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參數(shù)資料
| 型號： | SPP11N65C3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷馬鞍山⑩功率晶體管 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 816K |
| 代理商： | SPP11N65C3 |
2003-0
8
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15
Page 1
SPP11N65C3, SPA11N65C3
SPI11N65C3
Cool MOS
Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme d
v
/d
t
rated
High peak current capability
Improved transconductance
V
DS
R
DS(on)
I
D
650
0.38
V
A
11
P-TO262-3-1
P-TO220-3-31
P-TO220-3-1
P-TO220-3-31
1
2
3
Marking
11N65C3
11N65C3
11N65C3
Type
SPP11N65C3
Package
P-TO220-3-1
Ordering Code
Q67040-S4557
SPA11N65C3
P-TO220-3-31 Q67040-S4554
SPI11N65C3
P-TO262-3-1
Q67040-S4561
Maximum Ratings
Parameter
Symbol
Value
Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
11
7
11
1)
7
1)
A
I
D puls
E
AS
33
33
A
I
D
=2.5A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=4A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage
340
340
mJ
E
AR
0.6
0.6
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
4
4
A
±20
±
30
125
±20
±
30
33
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
W
SPP_I
-55...+150
°C
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| SPP11N65C3_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated |
| SPP11N65C3_09 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
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| SPP11N65C3XKSA1 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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