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參數(shù)資料
| 型號： | SPB08P06P |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SIPMOS Power-Transistor |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 96K |
| 代理商： | SPB08P06P |
1999-11-22
Page 1
SPP08P06P
SPB08P06P
Preliminary data
SIPMOS
Power-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
dvdt rated
·
175°C operating temperature
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
V
V
DS
R
DS(on)
I
D
-60
0.3
-8.8
W
A
Type
SPP08P06P
SPB08P06P
Package
P-TO220-3-1 Q67040-S4729
P-TO263-3-2 Q67040-S4233
Ordering Code
Pin 1
G
PIN 2/4
D
PIN 3
S
Maximum Ratings
,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= -8.8 A ,
V
DD
= -25 V,
R
GS
= 25
W
Avalanche energy, periodic limited by
T
jmax
Reverse diode dvdt
I
S
= -8.8 A,
V
DS
= -48 ,
didt
= 200 A/μs,
T
jmax
= 175 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol
I
D
Unit
A
Value
-8.8
-6.2
I
D puls
-35.2
70
mJ
E
AS
E
AR
dvdt
4.2
6
kV/μs
V
GS
P
tot
±20
42
V
W
T
j ,
T
stg
-55...+175
55/175/56
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPB08P06P G | 功能描述:MOSFET P-CH 60V 8.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPB08P06PG | 制造商:Infineon Technologies AG 功能描述: |
| SPB08P06PGATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 60V 8.8A TO-263 |
| SPB08P06PGXT | 制造商:Infineon 功能描述:-60V,-8.8A,P-channel power MOSFET |
| SPB08P06PNT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) TO-263 |
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