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參數資料
| 型號： | SPB80P06P |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | SIPMOS Power-Transistor |
| 中文描述： | SIPMOS功率晶體管 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 96K |
| 代理商： | SPB80P06P |
1999-11-22
Page 1
SPP80P06P
SPB80P06P
Preliminary data
SIPMOS
Power-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
dvdt rated
·
175°C operating temperature
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
V
V
DS
R
DS(on)
I
D
-60
0.023
-80
W
A
Type
SPP80P06P
SPB80P06P
Package
P-TO220-3-1 Q67042-S4017
P-TO263-3-2 Q67042-S4016
Ordering Code
Pin 1
G
PIN 2/4
D
PIN 3
S
Maximum Ratings
,at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C =
25 °C,
1)
T
C
= 100 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= -80 A ,
V
DD
= -25 V,
R
GS
= 25
W
Avalanche energy, periodic limited by
T
jmax
Reverse diode dvdt
I
S
= -80 A,
V
DS
= -48 ,
didt
= 200 A/μs,
T
jmax
= 175 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol
I
D
Unit
A
Value
-80
-64
I
D puls
-320
823
mJ
E
AS
E
AR
dvdt
34
6
kV/μs
V
GS
P
tot
±20
340
V
W
T
j ,
T
stg
-55...+175
55/175/56
°C
1Current limited by bondwire; with an R
thJC
= 0.4 K/W the chip is able to carry I
D
= -91A
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