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參數資料
| 型號： | SPD30N08S2L-24 |
| 廠商： | SIEMENS AG |
| 英文描述： | OptiMOSPower-Transistor( MOS 型功率晶體管) |
| 中文描述： | 的OptiMOS功率晶體管（馬鞍山型功率晶體管） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 156K |
| 代理商： | SPD30N08S2L-24 |
2000-01-13
Page 1
SPD30N08S2L-24
Target data sheet
SIPMOS
=
Power-Transistor
Features
N-Channel
Enhancement mode
Avalanche rated
Logic Level
d
v
/d
t
rated
=
175°C operating temperature
Product Summary
Drain source voltage
V
DS
R
DS(on)
I
D
75
V
Drain-source on-state resistance
24
m
A
Continuous drain current
25
Type
SPD30N08S2L-24 D-PACK
Package
Ordering Code
-
Marking
-
Pin 1
G
PIN 2
D
PIN 3
S
Maximum Ratings
,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
C
= 25 °C,
1)
T
C
= 100 °C
Pulsed drain current
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 25 A ,
V
DD
= 25 V,
R
GS
= 25
Reverse diode d
v
/d
t
I
S
= 25 A,
V
DS
= 60 V, d
i
/d
t
= 200 A/μs,
T
jmax
= 175 °C
Gate source voltage
I
D
25
25
A
I
D puls
120
E
AS
240
mJ
d
v
/d
t
6
kV/μs
V
GS
P
tot
±20
V
Power dissipation
T
C
= 25 °C
Operating and storage temperature
130
W
T
j ,
T
stg
-55...+175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1Current limited by bondwire; with an
R
thJC
= 1.2 K/W the chip is able to carry
I
D
= 49 A
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