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參數資料
| 型號： | SPLMN83-G |
| 元件分類： | 激光器 |
| 英文描述： | 830 nm, LASER DIODE |
| 文件頁數： | 2/6頁 |
| 文件大小： | 46K |
| 代理商： | SPLMN83-G |
2000-01-01
2
OPTO SEMICONDUCTORS
SPL MNxx, SPL MYxx
Type Designation System
SPL M Y xx - G
Y) Collimation
Beam Divergence / 1/e
2
N
–
No optics
30
° × 5°
Y
–
Fast axis collimation
< 0.5° (15 mrad) × 5°
x) Wavelength
81
–
808 nm
83
–
830 nm
94
–
940 nm
98
–
975 nm
G) Package/Power
Package
Features
D
–
DL-type/30 W cw
compact size 12
× 22 × 8 mm
G
–
SP-type/40 W cw
reduced thermal resistance 25
× 25 × 12 mm
Recommended Types
Wavelength
1)
1)
Other wavelengths in the range of 780 nm
… 980 nm are available on request.
Max. Output Power
Ordering Code
SPL MN81-D
808 nm
30 W, cw
Q62702-P3555
SPL MN81-G
808 nm
40 W, cw
Q62702-P5312
Both packages are available on request with any other unmounted bar from data sheet SPL Byxx.
Maximum Ratings (
T
A = 20 °C mount temperature)
Parameter
Symbol
Values
Unit
min.
max.
Operating temperature
1)
Condensation must be avoided.
T
op
– 10
+ 60
°C
Storage temperature
1)
T
stg
– 40
+ 85
°C
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