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參數(shù)資料
| 型號： | SPLMN83-G |
| 元件分類： | 激光器 |
| 英文描述： | 830 nm, LASER DIODE |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 46K |
| 代理商： | SPLMN83-G |
SPL MNxx, SPL MYxx
2000-01-01
3
OPTO SEMICONDUCTORS
Characteristics (
T
A = 20 °C mount temperature)
Parameter
Symbol
Values
Unit
min.
typ.
max.
Output power
1)
DL-pack.
SP-pack.
1)
Depending on wavelength.
P
op
–
25
35
30
40
W
Wavelength
λ
–
808
940
975
–
nm
Spectral width (FWHM)
λ
–3–nm
Threshold current
1)
DL-pack.
SP-pack.
I
th
8
15
10
17
12
20
A
Differential efficiency uncollimated
1)
η
d
0.8
0.9
1
W/A
Fast-axis collimation efficiency
MY-series
into beam divergence
η
col
–
93
–
%
Operating current
DL-pack.
SP-pack.
I
op
–
38
45
40
50
A
Operating voltage
V
op
–
1.8
–V
Conversion efficiency
1)
η
c
35
43
–
%
Beam divergence 1/e
2 2)
MN-series
MY-series
2)
Far field divergence refers to half angle at 1/e
2 relative intensity.
θ⊥ × θ
||
30
°× 5°
0.5
°× 5°
deg.
Thermal resistance
DL-pack.
SP-pack.
R
th
1
0.8
K/W
Temperature coefficient of wavelength
λ / T
0.27
nm/K
Mount dimensions
DL-pack.
SP-pack.
w
× d × h
12
× 22 × 8
25
× 25 × 12
mm
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