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參數資料
| 型號： | SPP80N03S2L-04 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 415K |
| 代理商： | SPP80N03S2L-04 |
2003-05-09
Page 1
SPI80N03S2L-03
SPP80N03S2L-03,SPB80N03S2L-03
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
30
V
m
A
2.8
80
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
Marking
2N03L03
2N03L03
2N03L03
Type
SPP80N03S2L-03
Package
P- TO220 -3-1
Ordering Code
Q67040-S4248
SPB80N03S2L-03
SPI80N03S2L-03
P- TO263 -3-2
P- TO262 -3-1
Q67040-S4259
Q67042-S4078
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Value
80
80
Unit
A
T
C
=25°C
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
320
I
D
=80 A ,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode d
v
/d
t
E
AS
810
mJ
E
AR
d
v
/d
t
30
I
S
=80A,
V
DS
=24V,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
6
kV/μs
V
GS
P
tot
±20
300
V
W
T
C
=25°C
Operating and storage temperature
T
j ,
T
stg
-55... +175
55/175/56
°C
IEC climatic category; DIN IEC 68-1
相關PDF資料 |
PDF描述 |
|---|---|
| SPB80N03S2L-04 | OptiMOS Power-Transistor |
| SPI80N03S2L-05 | OptiMOS Power-Transistor |
| SPI80N03S2-03 | OptiMOS Power-Transistor |
| SPP80N03S2-03 | OptiMOS Power-Transistor |
| SPB80N03S2-03 | OptiMOS Power-Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SPP80N03S2L04AKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 80A TO-220 |
| SPP80N03S2L05 | 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPP80N03S2L-05 | 功能描述:MOSFET N-KANAL POWER MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPP80N03S2L05AKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 80A TO-220AB |
| SPP80N03S2L-06 | 功能描述:MOSFET N-CH 30V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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