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參數(shù)資料
| 型號(hào)： | SR401 |
| 廠(chǎng)商： | Polyfet RF Devices |
| 英文描述： | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 硅柵增強(qiáng)型射頻功率VDMOS晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 37K |
| 代理商： | SR401 |
polyfet rf devices
SR401
13
Push - Pull
AR
200.0
15.0
300.0
0.35 C/W
65
7.2
42.00
6.0
55
0.16
15.00
27.0
465
0.60
70
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
20:1
Relative
1.20
120.00
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Vds =
Idq =
A, Vds = V, F =
1.20
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 1.20
175
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
175
175
Common Source Input Capacitance
70
V
20
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS ( 300.0
ABSOLUTE MAXIMUM RATINGS ( T =
Gps
A, Vds = V, F =
A, Vds = V, F =
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
300.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
28.0
Vds =
A, Vgs = Vds
Ids =
A
η
dB
%
o
o
o
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER
TRANSISTOR
VDMOS
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
REVISION 10/08/2001
25 C )
WATTS OUTPUT )
200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SR40100 | 制造商:HY 制造商全稱(chēng):HY ELECTRONIC CORP. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| SR40100P | 制造商:MIC 制造商全稱(chēng):MIC GROUP RECTIFIERS 功能描述:SCHOTTKY BARRIER RECTIFIER |
| SR40100PT | 功能描述:肖特基二極管與整流器 40A,100V,DUAL SCHOTTKY Rect RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SR40100PT C0 | 制造商:SKMI/Taiwan 功能描述:Diode Schottky 100V 40A 3-Pin(3+Tab) TO-3P Tube |
| SR40150 | 制造商:HY 制造商全稱(chēng):HY ELECTRONIC CORP. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
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