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參數(shù)資料
| 型號： | SRM2AV213LLBT |
| 廠商： | 愛普生（中國）有限公司 |
| 英文描述： | Super Low Voltage and Low Current Consumption、2M-Bit（131,072Words x 16-Bit）Asynchronous Static RAM(超低電壓和小電流、2M位（131,072字 x 16位）異步靜態(tài)RAM) |
| 中文描述： | 超級低電壓和低電流消耗，200萬位（131,072字× 16位）異步靜態(tài)RAM（超低電壓和小電流，200萬位（131,072字× 16位）異步靜態(tài)RAM）的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 126K |
| 代理商： | SRM2AV213LLBT |
Rev.1.3
Rev.1.3
I
DESCRIPTION
The SRM2AV213LLBT
8
is a 131,072words x 16-bit asynchronous, random access memory on a monolithic
CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
with back-up batteries. The asynchronous and static nature of the memory requires no external clock and no
refreshing circuit. It is possible to control the data width by the data byte control. 3-state output allows easy
expansion of memory capacity. The temperature range of the SRM2AV213LLBT
8
is from –40 to 85
°
C, and it is
suitable for the industrial products.
I
FEATURES
G
Fast Access time........................ 85ns (2.4V)
G
Low supply current ..................... LL Version
G
Completely static........................ No clock required
G
Supply voltage............................ 2.4V to 3.3V
G
3-state output with wired-OR capability
G
Non-volatile storage with back-up batteries
G
Package ..................................... SRM2AV213LLBT
TFBGA-48 pin (Tape CSP)
I
BLOCK DIAGRAM
I/O Buffer
16
I/O1
I/O16
CS1
CS2
OE
WE
LB
UB
O
C
L
C
C
L
9
8
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A
Memory Cell Array
512 x 256 x 16
Column Gate
512
256
256 x 16
X
Y
2M-bit Static RAM
PF1067-03
SRM2AV213LLBT
8
G
Super Low Voltage Operation and Low Current Consumption
G
Access Time 85ns (2.4V)
G
131,072 Words x 16-bit Asynchronous
G
Wide Temperature Range
Supe LowVotage
Poducs
Opeaion
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