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參數(shù)資料
| 型號： | SSD2007 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N-CHANNEL POWER MOSFET |
| 中文描述： | 雙N溝道功率MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 181K |
| 代理商： | SSD2007 |
50
50
±
20
2.0
1.6
8.0
2.0
1.3
- 55 to +150
300
8 SOP
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
4
3
1
2
5
6
8
7
Top View
N-Channel MOSFET
!
Extremely Lower R
DS(ON)
!
Improved Inductive Ruggedness
!
Fast Switching Times
!
Rugged Polysilicon Gate Cell Structure
!
Low Input Capacitance
!
Extended Safe Operating Area
!
Improved High Temperature Reliability
!
Surface Mounding Package :
8SOP
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage(1)
Drain-Gate Voltage(R
GS
=1.0M
)(1)
Gate-to-Source Voltage
Continuous Drain Current T
A
=25
℃
Continuous Drain Current T
A
=100
℃
Drain Current-Pulsed (2)
Total Power Dissipation T
A
=25
℃
T
A
=70
℃
Operating and Storage
Junction Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/16” from case for 5 seconds
Characteristic
Value
Units
V
V
V
Symbol
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
STG
T
L
A
V
A
℃
W
Notes ;
(1) T
J
= 25
℃
to 150
℃
(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature
Rev. A
SSD2007A
Dual N-CHANNEL POWER MOSFET
D
1
,D
2
G
1
,G
2
S
1
,S
2
D
1
,D
2
▼
▼
▼
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| SSD2009A | Dual N-CHANNEL POWER MOSFET |
| SSD2011A | Dual P-CHANNEL POWER MOSFET |
| SSD2025 | Dual N-CHANNEL POWER MOSFET |
| SSF10N60B | 600V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SSD2007A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-CHANNEL POWER MOSFET |
| SSD2007ASTF | 功能描述:MOSFET N-Ch/50V/2a .3Ohm@VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSD2007ASTF_Q | 功能描述:MOSFET N-Ch/50V/2a .3Ohm@VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSD2007ATF | 功能描述:MOSFET N-Ch/50V/2a 0.3Ohm@VGS=10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SSD2008A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 30V V(BR)DSS | 3.5A I(D) | SO |
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