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參數資料
| 型號： | SSF10N80A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Power MOSFET（6.5A，800V，0.95Ω）(N溝道功率MOS場效應管（漏電流6.5A, 漏源電壓800V，導通電阻0.95Ω）) |
| 中文描述： | 6.5 A, 800 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 256K |
| 代理商： | SSF10N80A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
μ
A (Max.) @ V
DS
= 800V
Low R
DS(ON)
: 0.746
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
θ
JC
R
θ
JA
Ο
C
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
TO-3PF
1.Gate 2. Drain 3. Source
3
2
1
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Ο
C
)
Ο
C
)
Ο
C
)
Characteristic
Value
800
6.5
4.1
40
30
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
Ο
C
A
Ο
C
SSF10N80A
BV
DSS
= 800 V
R
DS(on)
= 0.95
I
D
= 6.5 A
518
6.5
10
2.0
100
0.8
- 55 to +150
300
1.25
40
--
--
1999 Fairchild Semiconductor Corporation
Rev. B
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