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參數資料
| 型號： | SSI7N60A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 7A條（丁）|對262AA |
| 文件頁數： | 1/7頁 |
| 文件大小： | 652K |
| 代理商： | SSI7N60A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ V
DS
= 600V
Lower R
DS(ON)
: 0.977 (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
JC
R
JA
R
JA
θ
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C
Continuous Drain Current (T
C
=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 )
Total Power Dissipation (T
C
=25 C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
Characteristic
Value
600
7
4.4
28
+
_
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
o
C
A
*
SSW/I7N60A
BV
DSS
= 600 V
R
DS(on)
= 1.2
I
D
= 7 A
535
7
14.7
3.0
3.1
147
1.18
- 55 to +150
300
0.85
40
62.5
--
--
--
30
O
1
O
O
1
O
1
2
O
3
C
C
o
C
θ
θ
o
C/W
1999 Fairchild Semiconductor Corporation
Rev. B
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